APT100GT120JR by Microchip Tech – Specifications

Microchip Tech APT100GT120JR is a APT100GT120JR from Microchip Tech, part of the IGBTs. It is designed for 570W 123A 1.2kV NPT(非穿通型) SOT-227-4 IGBTs ROHS. This product comes in a SOT-227-4 package and is sold as Tube-packed. Key features include:

  • Power Dissipation (Pd): 570W
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 123A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 6.7nF@25V
  • Type: NPT(非穿通型)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of APT100GT120JR

Model NumberAPT100GT120JR
Model NameMicrochip Tech APT100GT120JR
CategoryIGBTs
BrandMicrochip Tech
Description570W 123A 1.2kV NPT(非穿通型) SOT-227-4 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-227-4
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)570W
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)123A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)6.7nF@25V
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-

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