APT36GA60SD15 by Microchip Tech – Specifications

Microchip Tech APT36GA60SD15 is a APT36GA60SD15 from Microchip Tech, part of the IGBTs. It is designed for 290W 65A 600V PT(穿通型) D3PAK IGBTs ROHS. This product comes in a D3PAK package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 122ns
  • Power Dissipation (Pd): 290W
  • Turn?on Delay Time (Td(on)): 16ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 65A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: PT(穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,20A
  • Total Gate Charge (Qg@Ic,Vge): 102nC
  • Diode Reverse Recovery Time (Trr): 19ns
  • Turn?off Switching Loss (Eoff): 0.254mJ
  • Turn?on Switching Loss (Eon): 0.307mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on APT36GA60SD15

Full Specifications of APT36GA60SD15

Model NumberAPT36GA60SD15
Model NameMicrochip Tech APT36GA60SD15
CategoryIGBTs
BrandMicrochip Tech
Description290W 65A 600V PT(穿通型) D3PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD3PAK
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))122ns
Power Dissipation (Pd)290W
Turn?on Delay Time (Td(on))16ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)65A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypePT(穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.5V@15V,20A
Total Gate Charge (Qg@Ic,Vge)102nC
Diode Reverse Recovery Time (Trr)19ns
Turn?off Switching Loss (Eoff)0.254mJ
Turn?on Switching Loss (Eon)0.307mJ

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