APT50GT120B2RDLG by Microchip Tech – Specifications

Microchip Tech APT50GT120B2RDLG is a APT50GT120B2RDLG from Microchip Tech, part of the IGBTs. It is designed for 694W 106A 1.2kV NPT(非穿通型) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 215ns
  • Power Dissipation (Pd): 694W
  • Turn?on Delay Time (Td(on)): 23ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 106A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.7V@15V,50A
  • Total Gate Charge (Qg@Ic,Vge): 240nC
  • Turn?off Switching Loss (Eoff): 1.91mJ
  • Turn?on Switching Loss (Eon): 3.585mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of APT50GT120B2RDLG

Model NumberAPT50GT120B2RDLG
Model NameMicrochip Tech APT50GT120B2RDLG
CategoryIGBTs
BrandMicrochip Tech
Description694W 106A 1.2kV NPT(非穿通型) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))215ns
Power Dissipation (Pd)694W
Turn?on Delay Time (Td(on))23ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)106A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.7V@15V,50A
Total Gate Charge (Qg@Ic,Vge)240nC
Turn?off Switching Loss (Eoff)1.91mJ
Turn?on Switching Loss (Eon)3.585mJ

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