APT80GA90S by Microchip Tech – Specifications

Microchip Tech APT80GA90S is a APT80GA90S from Microchip Tech, part of the IGBTs. It is designed for 625W 145A 900V PT(穿通型) D3PAK IGBTs ROHS. This product comes in a D3PAK package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 149ns
  • Power Dissipation (Pd): 625W
  • Turn?on Delay Time (Td(on)): 18ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 145A
  • Collector-Emitter Breakdown Voltage (Vces): 900V
  • Type: PT(穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.1V@15V,47A
  • Total Gate Charge (Qg@Ic,Vge): 200nC
  • Turn?off Switching Loss (Eoff): 1.389mJ
  • Turn?on Switching Loss (Eon): 1.625mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on APT80GA90S

Full Specifications of APT80GA90S

Model NumberAPT80GA90S
Model NameMicrochip Tech APT80GA90S
CategoryIGBTs
BrandMicrochip Tech
Description625W 145A 900V PT(穿通型) D3PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD3PAK
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))149ns
Power Dissipation (Pd)625W
Turn?on Delay Time (Td(on))18ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)145A
Collector-Emitter Breakdown Voltage (Vces)900V
Input Capacitance (Cies@Vce)-
TypePT(穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.1V@15V,47A
Total Gate Charge (Qg@Ic,Vge)200nC
Turn?off Switching Loss (Eoff)1.389mJ
Turn?on Switching Loss (Eon)1.625mJ

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