Minos MPF4N65 is a MPF4N65 from Minos, part of the MOSFETs. It is designed for 650V 4A 2Ω@10V,2A 25W 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS. This product comes in a TO-220F package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 4A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,2A
- Power Dissipation (Pd): 25W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 4.5pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 545pF@25V
- Total Gate Charge (Qg@Vgs): 15nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.203 grams.
More on MPF4N65
Full Specifications of MPF4N65
| Model Number | MPF4N65 |
| Model Name | Minos MPF4N65 |
| Category | MOSFETs |
| Brand | Minos |
| Description | 650V 4A 2Ω@10V,2A 25W 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.203 grams / 0.007161 oz |
| Package / Case | TO-220F |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2Ω@10V,2A |
| Power Dissipation (Pd) | 25W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 545pF@25V |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
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