MOTOROLA MTD3N25E1-MO is a MTD3N25E1-MO from MOTOROLA, part of the MOSFETs. It is designed for 250V 3A 40W 1.4Ω@1.5A,10V 4V@250uA 1PCSNChannel DPAK-3 MOSFETs ROHS. This product comes in a DPAK-3 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 250V
- Continuous Drain Current (Id): 3A
- Power Dissipation (Pd): 40W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@1.5A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 430pF@25V
- Total Gate Charge (Qg@Vgs): 15nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on MTD3N25E1-MO
Full Specifications of MTD3N25E1-MO
| Model Number | MTD3N25E1-MO |
| Model Name | MOTOROLA MTD3N25E1-MO |
| Category | MOSFETs |
| Brand | MOTOROLA |
| Description | 250V 3A 40W 1.4Ω@1.5A,10V 4V@250uA 1PCSNChannel DPAK-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | DPAK-3 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 250V |
| Continuous Drain Current (Id) | 3A |
| Power Dissipation (Pd) | 40W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.4Ω@1.5A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 430pF@25V |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |