MMBT3904T-MS by MSKSEMI – Specifications

MSKSEMI MMBT3904T-MS is a MMBT3904T-MS from MSKSEMI, part of the Bipolar Transistors - BJT. It is designed for 40V 200mW 100@10mA,1V 150mA NPN SOT-523-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-523-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector-Emitter Breakdown Voltage (Vceo): 40V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
  • Collector Current (Ic): 150mA
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@50mA,5mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.028 grams.

Full Specifications of MMBT3904T-MS

Model NumberMMBT3904T-MS
Model NameMSKSEMI MMBT3904T-MS
CategoryBipolar Transistors - BJT
BrandMSKSEMI
Description40V 200mW 100@10mA,1V 150mA NPN SOT-523-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.028 grams / 0.000988 oz
Package / CaseSOT-523-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)100@10mA,1V
Collector Current (Ic)150mA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@50mA,5mA
Transistor TypeNPN

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