MJ10012 by NTE ELECTRONICS, INC. – Specifications

NTE ELECTRONICS, INC. MJ10012 is a MJ10012 from NTE ELECTRONICS, INC., part of the Darlington Transistors. It is designed for 400V 300@3A,6V NPN 10A 175W TO-3 Darlington Transistors ROHS. This product comes in a TO-3 package and is sold as Bag-packed. Key features include:

  • Collector-emitter voltage (Vceo): 400V
  • DC current gain (hFE@Vce,Ic): 300@3A,6V
  • Transistor Type: NPN
  • Collector cut-off current (Icbo@Vcb): 1mA
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 175W
  • Operating Temperature: -65℃~+200℃@(Tj)
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.5V@2A,10A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on MJ10012

Full Specifications of MJ10012

Model NumberMJ10012
Model NameNTE ELECTRONICS, INC. MJ10012
CategoryDarlington Transistors
BrandNTE ELECTRONICS, INC.
Description400V 300@3A,6V NPN 10A 175W TO-3 Darlington Transistors ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Collector-emitter voltage (Vceo)400V
DC current gain (hFE@Vce,Ic)300@3A,6V
Transistor TypeNPN
Collector cut-off current (Icbo@Vcb)1mA
Collector Current (Ic)10A
Power Dissipation (Pd)175W
Operating Temperature-65℃~+200℃@(Tj)
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)2.5V@2A,10A

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