onsemi 1N5817G is a 1N5817G from onsemi, part of the Schottky Barrier Diodes (SBD). It is designed for 20V 750mV@3A 1A DO-41 Schottky Barrier Diodes (SBD) ROHS. This product comes in a DO-41 package and is sold as Bag-packed. Key features include:
- Reverse Leakage Current (Ir): 1mA@20V
- Reverse Voltage (Vr): 20V
- Forward Voltage (Vf@If): 750mV@3A
- Average Rectified Current (Io): 1A
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.349 grams.
More on 1N5817G
Full Specifications of 1N5817G
| Model Number | 1N5817G |
| Model Name | onsemi 1N5817G |
| Category | Schottky Barrier Diodes (SBD) |
| Brand | onsemi |
| Description | 20V 750mV@3A 1A DO-41 Schottky Barrier Diodes (SBD) ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.349 grams / 0.012311 oz |
| Package / Case | DO-41 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Reverse Leakage Current (Ir) | 1mA@20V |
| Reverse Voltage (Vr) | 20V |
| Diode Configuration | - |
| Forward Voltage (Vf@If) | 750mV@3A |
| Average Rectified Current (Io) | 1A |