onsemi 2N7002WT1G is a 2N7002WT1G from onsemi, part of the MOSFETs. It is designed for 60V 310mA 1.6Ω@10V,500mA 280mW 2.5V@250uA 1PCSNChannel SOT-323-3 MOSFETs ROHS. This product comes in a SOT-323-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 310mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6Ω@10V,500mA
- Power Dissipation (Pd): 280mW
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 24.5pF@20V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.031 grams.
More on 2N7002WT1G
Full Specifications of 2N7002WT1G
Model Number | 2N7002WT1G |
Model Name | onsemi 2N7002WT1G |
Category | MOSFETs |
Brand | onsemi |
Description | 60V 310mA 1.6Ω@10V,500mA 280mW 2.5V@250uA 1PCSNChannel SOT-323-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.031 grams / 0.001093 oz |
Package / Case | SOT-323-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 310mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.6Ω@10V,500mA |
Power Dissipation (Pd) | 280mW |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 24.5pF@20V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |