EFC2K102ANUZTDG by onsemi – Specifications

onsemi EFC2K102ANUZTDG is a EFC2K102ANUZTDG from onsemi, part of the MOSFETs. It is designed for 12V 33A 3.1W 2.75mΩ@5A,4.5V 1.3V@1mA 2 N-Channel WLCSP-10(2.98x1.49) MOSFETs ROHS. This product comes in a WLCSP-10(2.98x1.49) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 33A
  • Power Dissipation (Pd): 3.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.75mΩ@5A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.3V@1mA
  • Type: 2 N-Channel
  • Total Gate Charge (Qg@Vgs): [email protected]

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of EFC2K102ANUZTDG

Model NumberEFC2K102ANUZTDG
Model Nameonsemi EFC2K102ANUZTDG
CategoryMOSFETs
Brandonsemi
Description12V 33A 3.1W 2.75mΩ@5A,4.5V 1.3V@1mA 2 N-Channel WLCSP-10(2.98x1.49) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseWLCSP-10(2.98x1.49)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)33A
Power Dissipation (Pd)3.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.75mΩ@5A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.3V@1mA
Type2 N-Channel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-

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