onsemi EMF18XV6T5G is a EMF18XV6T5G from onsemi, part of the Digital Transistors. It is designed for 1 NPN - Pre-Biased,1 PNP 500mW 100mA SOT-563-6 Digital Transistors ROHS. This product comes in a SOT-563-6 package and is sold as Tape & Reel (TR). Key features include:
- DC Current Gain (hFE@Ic,Vce): 80@5mA,10V;120@1mA,6V
- Transistor Type: 1 NPN - Pre-Biased,1 PNP
- Power Dissipation (Pd): 500mW
- Collector Current (Ic): 100mA
- Collector-Emitter Breakdown Voltage (Vceo): 50V;60V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of EMF18XV6T5G
| Model Number | EMF18XV6T5G |
| Model Name | onsemi EMF18XV6T5G |
| Category | Digital Transistors |
| Brand | onsemi |
| Description | 1 NPN - Pre-Biased,1 PNP 500mW 100mA SOT-563-6 Digital Transistors ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | SOT-563-6 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| DC Current Gain (hFE@Ic,Vce) | 80@5mA,10V;120@1mA,6V |
| Transistor Type | 1 NPN - Pre-Biased,1 PNP |
| Power Dissipation (Pd) | 500mW |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V;60V |