onsemi FCD5N60-F085 is a FCD5N60-F085 from onsemi, part of the MOSFETs. It is designed for 600V 4.6A 54W 1.1Ω@4.6A,10V 5V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS. This product comes in a TO-252AA package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 4.6A
- Power Dissipation (Pd): 54W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.1Ω@4.6A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 570pF@25V
- Total Gate Charge (Qg@Vgs): 21nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FCD5N60-F085
Full Specifications of FCD5N60-F085
Model Number | FCD5N60-F085 |
Model Name | onsemi FCD5N60-F085 |
Category | MOSFETs |
Brand | onsemi |
Description | 600V 4.6A 54W 1.1Ω@4.6A,10V 5V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252AA |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 4.6A |
Power Dissipation (Pd) | 54W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.1Ω@4.6A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 570pF@25V |
Total Gate Charge (Qg@Vgs) | 21nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |