FCD5N60-F085 by onsemi – Specifications

onsemi FCD5N60-F085 is a FCD5N60-F085 from onsemi, part of the MOSFETs. It is designed for 600V 4.6A 54W 1.1Ω@4.6A,10V 5V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS. This product comes in a TO-252AA package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 4.6A
  • Power Dissipation (Pd): 54W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.1Ω@4.6A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 570pF@25V
  • Total Gate Charge (Qg@Vgs): 21nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FCD5N60-F085

Model NumberFCD5N60-F085
Model Nameonsemi FCD5N60-F085
CategoryMOSFETs
Brandonsemi
Description600V 4.6A 54W 1.1Ω@4.6A,10V 5V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252AA
Package / ArrangeBag-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)4.6A
Power Dissipation (Pd)54W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.1Ω@4.6A,10V
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)570pF@25V
Total Gate Charge (Qg@Vgs)21nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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