onsemi FCMT080N65S3 is a FCMT080N65S3 from onsemi, part of the MOSFETs. It is designed for 650V 38A 80mΩ@19A,10V 260W 4.5V@880uA 1PCSNChannel TDFN-4(8x8) MOSFETs ROHS. This product comes in a TDFN-4(8x8) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 38A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@19A,10V
- Power Dissipation (Pd): 260W
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@880uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.765nF@400V
- Total Gate Charge (Qg@Vgs): 71nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.
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Full Specifications of FCMT080N65S3
| Model Number | FCMT080N65S3 |
| Model Name | onsemi FCMT080N65S3 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 650V 38A 80mΩ@19A,10V 260W 4.5V@880uA 1PCSNChannel TDFN-4(8x8) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.300 grams / 0.010582 oz |
| Package / Case | TDFN-4(8x8) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 38A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 80mΩ@19A,10V |
| Power Dissipation (Pd) | 260W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@880uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2.765nF@400V |
| Total Gate Charge (Qg@Vgs) | 71nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |