onsemi FCPF190N60E is a FCPF190N60E from onsemi, part of the MOSFETs. It is designed for 600V 20.6A 190mΩ@10V,10A 39W 3.5V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 20.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@10V,10A
- Power Dissipation (Pd): 39W
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.175nF@25V
- Total Gate Charge (Qg@Vgs): 82nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.52 grams.
More on FCPF190N60E
Full Specifications of FCPF190N60E
| Model Number | FCPF190N60E |
| Model Name | onsemi FCPF190N60E |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 20.6A 190mΩ@10V,10A 39W 3.5V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.520 grams / 0.08889 oz |
| Package / Case | TO-220F-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 20.6A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 190mΩ@10V,10A |
| Power Dissipation (Pd) | 39W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 3.175nF@25V |
| Total Gate Charge (Qg@Vgs) | 82nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |