onsemi FDB13AN06A0 is a FDB13AN06A0 from onsemi, part of the MOSFETs. It is designed for 60V 115W 13.5mΩ@62A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 10.9A;62A
- Power Dissipation (Pd): 115W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 13.5mΩ@62A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.35nF@25V
- Total Gate Charge (Qg@Vgs): 29nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.42 grams.
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Full Specifications of FDB13AN06A0
Model Number | FDB13AN06A0 |
Model Name | onsemi FDB13AN06A0 |
Category | MOSFETs |
Brand | onsemi |
Description | 60V 115W 13.5mΩ@62A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.420 grams / 0.050089 oz |
Package / Case | D2PAK(TO-263) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 10.9A;62A |
Power Dissipation (Pd) | 115W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 13.5mΩ@62A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.35nF@25V |
Total Gate Charge (Qg@Vgs) | 29nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |