onsemi FDB8160-F085 is a FDB8160-F085 from onsemi, part of the MOSFETs. It is designed for 30V 80A 254W 1.8mΩ@80A,10V 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS. This product comes in a TO-263AB package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 80A
- Power Dissipation (Pd): 254W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8mΩ@80A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 11.825nF@15V
- Total Gate Charge (Qg@Vgs): 243nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDB8160-F085
Full Specifications of FDB8160-F085
| Model Number | FDB8160-F085 |
| Model Name | onsemi FDB8160-F085 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 80A 254W 1.8mΩ@80A,10V 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-263AB |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 80A |
| Power Dissipation (Pd) | 254W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.8mΩ@80A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 11.825nF@15V |
| Total Gate Charge (Qg@Vgs) | 243nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |