FDB8444TS by onsemi – Specifications

onsemi FDB8444TS is a FDB8444TS from onsemi, part of the MOSFETs. It is designed for 40V 5mΩ@70A,10V 181W 4V@250uA 1PCSNChannel TO-263-5 MOSFETs ROHS. This product comes in a TO-263-5 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 20A;70A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@70A,10V
  • Power Dissipation (Pd): 181W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.41nF@25V
  • Total Gate Charge (Qg@Vgs): 338nC@20V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDB8444TS

Model NumberFDB8444TS
Model Nameonsemi FDB8444TS
CategoryMOSFETs
Brandonsemi
Description40V 5mΩ@70A,10V 181W 4V@250uA 1PCSNChannel TO-263-5 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-5
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)20A;70A
Drain Source On Resistance (RDS(on)@Vgs,Id)5mΩ@70A,10V
Power Dissipation (Pd)181W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.41nF@25V
Total Gate Charge (Qg@Vgs)338nC@20V
Operating Temperature-55℃~+175℃@(Tj)

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