onsemi FDB8444TS is a FDB8444TS from onsemi, part of the MOSFETs. It is designed for 40V 5mΩ@70A,10V 181W 4V@250uA 1PCSNChannel TO-263-5 MOSFETs ROHS. This product comes in a TO-263-5 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 20A;70A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@70A,10V
- Power Dissipation (Pd): 181W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 8.41nF@25V
- Total Gate Charge (Qg@Vgs): 338nC@20V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FDB8444TS
Model Number | FDB8444TS |
Model Name | onsemi FDB8444TS |
Category | MOSFETs |
Brand | onsemi |
Description | 40V 5mΩ@70A,10V 181W 4V@250uA 1PCSNChannel TO-263-5 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-263-5 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 20A;70A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 5mΩ@70A,10V |
Power Dissipation (Pd) | 181W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 8.41nF@25V |
Total Gate Charge (Qg@Vgs) | 338nC@20V |
Operating Temperature | -55℃~+175℃@(Tj) |