onsemi FDB86563-F085 is a FDB86563-F085 from onsemi, part of the MOSFETs. It is designed for 60V 110A 1.6mΩ@10V,80A 333W 2.9V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 110A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6mΩ@10V,80A
- Power Dissipation (Pd): 333W
- Gate Threshold Voltage (Vgs(th)@Id): 2.9V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 186pF@30V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 10.6nF@30V
- Total Gate Charge (Qg@Vgs): 126nC@0~10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.86 grams.
More on FDB86563-F085
Full Specifications of FDB86563-F085
Model Number | FDB86563-F085 |
Model Name | onsemi FDB86563-F085 |
Category | MOSFETs |
Brand | onsemi |
Description | 60V 110A 1.6mΩ@10V,80A 333W 2.9V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.860 grams / 0.06561 oz |
Package / Case | TO-263-2 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 110A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.6mΩ@10V,80A |
Power Dissipation (Pd) | 333W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.9V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 186pF@30V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 10.6nF@30V |
Total Gate Charge (Qg@Vgs) | 126nC@0~10V |
Operating Temperature | -55℃~+175℃@(Tj) |