FDB8870-F085 by onsemi – Specifications

onsemi FDB8870-F085 is a FDB8870-F085 from onsemi, part of the MOSFETs. It is designed for 30V 160W 3.9mΩ@35A,10V 2.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 23A;160A
  • Power Dissipation (Pd): 160W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@35A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.2nF@15V
  • Total Gate Charge (Qg@Vgs): 132nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDB8870-F085

Model NumberFDB8870-F085
Model Nameonsemi FDB8870-F085
CategoryMOSFETs
Brandonsemi
Description30V 160W 3.9mΩ@35A,10V 2.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)23A;160A
Power Dissipation (Pd)160W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.9mΩ@35A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.2nF@15V
Total Gate Charge (Qg@Vgs)132nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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