onsemi FDB9503L-F085 is a FDB9503L-F085 from onsemi, part of the MOSFETs. It is designed for 40V 110A 2.6mΩ@80A,10V 333W 3V@250uA 1PCSPChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 110A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.6mΩ@80A,10V
- Power Dissipation (Pd): 333W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 8.32nF@20V
- Total Gate Charge (Qg@Vgs): 255nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.69 grams.
More on FDB9503L-F085
Full Specifications of FDB9503L-F085
Model Number | FDB9503L-F085 |
Model Name | onsemi FDB9503L-F085 |
Category | MOSFETs |
Brand | onsemi |
Description | 40V 110A 2.6mΩ@80A,10V 333W 3V@250uA 1PCSPChannel D2PAK MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.690 grams / 0.059613 oz |
Package / Case | D2PAK |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 110A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.6mΩ@80A,10V |
Power Dissipation (Pd) | 333W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 8.32nF@20V |
Total Gate Charge (Qg@Vgs) | 255nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |