FDD6630A by onsemi – Specifications

onsemi FDD6630A is a FDD6630A from onsemi, part of the MOSFETs. It is designed for 30V 21A 28W 35mΩ@10V,7.6A 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 21A
  • Power Dissipation (Pd): 28W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@10V,7.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 462pF@15V
  • Total Gate Charge (Qg@Vgs): 7nC@5V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.37 grams.

Full Specifications of FDD6630A

Model NumberFDD6630A
Model Nameonsemi FDD6630A
CategoryMOSFETs
Brandonsemi
Description30V 21A 28W 35mΩ@10V,7.6A 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.370 grams / 0.013051 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)21A
Power Dissipation (Pd)28W
Drain Source On Resistance (RDS(on)@Vgs,Id)35mΩ@10V,7.6A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)462pF@15V
Total Gate Charge (Qg@Vgs)7nC@5V
Operating Temperature-55℃~+175℃@(Tj)

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