onsemi FDD86250 is a FDD86250 from onsemi, part of the MOSFETs. It is designed for 150V 22mΩ@10V,8A 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 8A;50A
- Power Dissipation (Pd): 3.1W;132W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@10V,8A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.11nF@75V
- Total Gate Charge (Qg@Vgs): 33nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.374 grams.
More on FDD86250
Full Specifications of FDD86250
| Model Number | FDD86250 |
| Model Name | onsemi FDD86250 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 150V 22mΩ@10V,8A 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.374 grams / 0.013192 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 150V |
| Continuous Drain Current (Id) | 8A;50A |
| Power Dissipation (Pd) | 3.1W;132W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 22mΩ@10V,8A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2.11nF@75V |
| Total Gate Charge (Qg@Vgs) | 33nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |