onsemi FDD86567-F085 is a FDD86567-F085 from onsemi, part of the MOSFETs. It is designed for 60V 100A 3.2mΩ@80A,10V 227W 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 100A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.2mΩ@80A,10V
- Power Dissipation (Pd): 227W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.95nF@30V
- Total Gate Charge (Qg@Vgs): 82nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.41 grams.
More on FDD86567-F085
Full Specifications of FDD86567-F085
Model Number | FDD86567-F085 |
Model Name | onsemi FDD86567-F085 |
Category | MOSFETs |
Brand | onsemi |
Description | 60V 100A 3.2mΩ@80A,10V 227W 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.410 grams / 0.014462 oz |
Package / Case | TO-252-2 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 100A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.2mΩ@80A,10V |
Power Dissipation (Pd) | 227W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 4.95nF@30V |
Total Gate Charge (Qg@Vgs) | 82nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |