FDD8880_NL by onsemi – Specifications

onsemi FDD8880_NL is a FDD8880_NL from onsemi, part of the MOSFETs. It is designed for 30V 55W 9mΩ@35A,10V 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 13A;58A
  • Power Dissipation (Pd): 55W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@35A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.26nF@15V
  • Total Gate Charge (Qg@Vgs): 31nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDD8880_NL

Model NumberFDD8880_NL
Model Nameonsemi FDD8880_NL
CategoryMOSFETs
Brandonsemi
Description30V 55W 9mΩ@35A,10V 2.5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252(DPAK)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)13A;58A
Power Dissipation (Pd)55W
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@35A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.26nF@15V
Total Gate Charge (Qg@Vgs)31nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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