onsemi FDFS2P106A is a FDFS2P106A from onsemi, part of the MOSFETs. It is designed for 60V 3A 110mΩ@3A,10V 900mW 3V@250uA 1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 3A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@3A,10V
- Power Dissipation (Pd): 900mW
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 714pF@30V
- Total Gate Charge (Qg@Vgs): 21nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.
More on FDFS2P106A
Full Specifications of FDFS2P106A
Model Number | FDFS2P106A |
Model Name | onsemi FDFS2P106A |
Category | MOSFETs |
Brand | onsemi |
Description | 60V 3A 110mΩ@3A,10V 900mW 3V@250uA 1PCSPChannel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.120 grams / 0.004233 oz |
Package / Case | SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 3A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 110mΩ@3A,10V |
Power Dissipation (Pd) | 900mW |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 714pF@30V |
Total Gate Charge (Qg@Vgs) | 21nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |