FDFS2P753AZ by onsemi – Specifications

onsemi FDFS2P753AZ is a FDFS2P753AZ from onsemi, part of the MOSFETs. It is designed for 30V 3A 3.1W 115mΩ@3A,10V 3V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 3A
  • Power Dissipation (Pd): 3.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 115mΩ@3A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 455pF@15V
  • Total Gate Charge (Qg@Vgs): 11nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.

Full Specifications of FDFS2P753AZ

Model NumberFDFS2P753AZ
Model Nameonsemi FDFS2P753AZ
CategoryMOSFETs
Brandonsemi
Description30V 3A 3.1W 115mΩ@3A,10V 3V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.215 grams / 0.007584 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)3A
Power Dissipation (Pd)3.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)115mΩ@3A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)455pF@15V
Total Gate Charge (Qg@Vgs)11nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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