onsemi FDMA2002NZ is a FDMA2002NZ from onsemi, part of the MOSFETs. It is designed for 30V 2.9A 650mW 123mΩ@4.5V,2.9A 1.5V@250uA 2 N-Channel VDFN-6(2x2) MOSFETs ROHS. This product comes in a VDFN-6(2x2) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 2.9A
- Power Dissipation (Pd): 650mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 123mΩ@4.5V,2.9A
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 220pF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.32 grams.
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Full Specifications of FDMA2002NZ
Model Number | FDMA2002NZ |
Model Name | onsemi FDMA2002NZ |
Category | MOSFETs |
Brand | onsemi |
Description | 30V 2.9A 650mW 123mΩ@4.5V,2.9A 1.5V@250uA 2 N-Channel VDFN-6(2x2) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.320 grams / 0.011288 oz |
Package / Case | VDFN-6(2x2) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 2.9A |
Power Dissipation (Pd) | 650mW |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 123mΩ@4.5V,2.9A |
Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
Type | 2 N-Channel |
Input Capacitance (Ciss@Vds) | 220pF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |