FDMC010N08C by onsemi – Specifications

onsemi FDMC010N08C is a FDMC010N08C from onsemi, part of the MOSFETs. It is designed for 80V 10mΩ@16A,10V 4V@90uA 1PCSNChannel Power-33 MOSFETs ROHS. This product comes in a Power-33 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 11A;51A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@16A,10V
  • Power Dissipation (Pd): 2.4W;52W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.5nF@40V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

Full Specifications of FDMC010N08C

Model NumberFDMC010N08C
Model Nameonsemi FDMC010N08C
CategoryMOSFETs
Brandonsemi
Description80V 10mΩ@16A,10V 4V@90uA 1PCSNChannel Power-33 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CasePower-33
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)11A;51A
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@16A,10V
Power Dissipation (Pd)2.4W;52W
Gate Threshold Voltage (Vgs(th)@Id)4V@90uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.5nF@40V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - FDMC010N08C With Other 200 Models

Related Models - FDMC010N08C Alternative

Scroll to Top