onsemi FDMC2610 is a FDMC2610 from onsemi, part of the MOSFETs. It is designed for 200V 200mΩ@2.2A,10V 4V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a WDFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 2.2A;9.5A
- Power Dissipation (Pd): 2.1W;42W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 200mΩ@2.2A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 960pF@100V
- Total Gate Charge (Qg@Vgs): 18nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.139 grams.
More on FDMC2610
Full Specifications of FDMC2610
Model Number | FDMC2610 |
Model Name | onsemi FDMC2610 |
Category | MOSFETs |
Brand | onsemi |
Description | 200V 200mΩ@2.2A,10V 4V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.139 grams / 0.004903 oz |
Package / Case | WDFN-8(3.3x3.3) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 200V |
Continuous Drain Current (Id) | 2.2A;9.5A |
Power Dissipation (Pd) | 2.1W;42W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 200mΩ@2.2A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 960pF@100V |
Total Gate Charge (Qg@Vgs) | 18nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |