FDMC2610 by onsemi – Specifications

onsemi FDMC2610 is a FDMC2610 from onsemi, part of the MOSFETs. It is designed for 200V 200mΩ@2.2A,10V 4V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS. This product comes in a WDFN-8(3.3x3.3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 2.2A;9.5A
  • Power Dissipation (Pd): 2.1W;42W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 200mΩ@2.2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 960pF@100V
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.139 grams.

Full Specifications of FDMC2610

Model NumberFDMC2610
Model Nameonsemi FDMC2610
CategoryMOSFETs
Brandonsemi
Description200V 200mΩ@2.2A,10V 4V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.139 grams / 0.004903 oz
Package / CaseWDFN-8(3.3x3.3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)2.2A;9.5A
Power Dissipation (Pd)2.1W;42W
Drain Source On Resistance (RDS(on)@Vgs,Id)200mΩ@2.2A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)960pF@100V
Total Gate Charge (Qg@Vgs)18nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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