onsemi FDMS004N08C is a FDMS004N08C from onsemi, part of the MOSFETs. It is designed for 80V 126A 125W 4mΩ@44A,10V 4V@250uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS. This product comes in a PQFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 126A
- Power Dissipation (Pd): 125W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@44A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.25nF@40V
- Total Gate Charge (Qg@Vgs): 55nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.17 grams.
More on FDMS004N08C
Full Specifications of FDMS004N08C
Model Number | FDMS004N08C |
Model Name | onsemi FDMS004N08C |
Category | MOSFETs |
Brand | onsemi |
Description | 80V 126A 125W 4mΩ@44A,10V 4V@250uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.170 grams / 0.005997 oz |
Package / Case | PQFN-8(5x6) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 80V |
Continuous Drain Current (Id) | 126A |
Power Dissipation (Pd) | 125W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 4mΩ@44A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 4.25nF@40V |
Total Gate Charge (Qg@Vgs) | 55nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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