onsemi FDMS0310AS is a FDMS0310AS from onsemi, part of the MOSFETs. It is designed for 30V 4.3mΩ@19A,10V 3V@1mA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS. This product comes in a PQFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 19A;22A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.3mΩ@19A,10V
- Power Dissipation (Pd): 2.5W;41W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.28nF@15V
- Total Gate Charge (Qg@Vgs): 37nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FDMS0310AS
Model Number | FDMS0310AS |
Model Name | onsemi FDMS0310AS |
Category | MOSFETs |
Brand | onsemi |
Description | 30V 4.3mΩ@19A,10V 3V@1mA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | PQFN-8(5x6) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 19A;22A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.3mΩ@19A,10V |
Power Dissipation (Pd) | 2.5W;41W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@1mA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.28nF@15V |
Total Gate Charge (Qg@Vgs) | 37nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |