FDMS86369-F085 by onsemi – Specifications

onsemi FDMS86369-F085 is a FDMS86369-F085 from onsemi, part of the MOSFETs. It is designed for 80V 64A 5.9mΩ@10V,65A 107W 3V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS. This product comes in a Power-56-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 64A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.9mΩ@10V,65A
  • Power Dissipation (Pd): 107W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 14pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.47nF@40V
  • Total Gate Charge (Qg@Vgs): 35nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FDMS86369-F085

Full Specifications of FDMS86369-F085

Model NumberFDMS86369-F085
Model Nameonsemi FDMS86369-F085
CategoryMOSFETs
Brandonsemi
Description80V 64A 5.9mΩ@10V,65A 107W 3V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePower-56-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)64A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.9mΩ@10V,65A
Power Dissipation (Pd)107W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)14pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.47nF@40V
Total Gate Charge (Qg@Vgs)35nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

Compare onsemi - FDMS86369-F085 With Other 200 Models

Related Models - FDMS86369-F085 Alternative

Scroll to Top