FDMS86381-F085 by onsemi – Specifications

onsemi FDMS86381-F085 is a FDMS86381-F085 from onsemi, part of the MOSFETs. It is designed for 80V 30A 17.2mΩ@10V,30A 50W 2.9V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS. This product comes in a Power-56-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17.2mΩ@10V,30A
  • Power Dissipation (Pd): 50W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.9V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 7pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 866pF@40V
  • Total Gate Charge (Qg@Vgs): 14nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FDMS86381-F085

Full Specifications of FDMS86381-F085

Model NumberFDMS86381-F085
Model Nameonsemi FDMS86381-F085
CategoryMOSFETs
Brandonsemi
Description80V 30A 17.2mΩ@10V,30A 50W 2.9V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePower-56-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)17.2mΩ@10V,30A
Power Dissipation (Pd)50W
Gate Threshold Voltage (Vgs(th)@Id)2.9V@250uA
Reverse Transfer Capacitance (Crss@Vds)7pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)866pF@40V
Total Gate Charge (Qg@Vgs)14nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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