FDMT1D3N08B by onsemi – Specifications

onsemi FDMT1D3N08B is a FDMT1D3N08B from onsemi, part of the MOSFETs. It is designed for 80V 164A 1.1mΩ@10V,36A 178W 3.2V@250uA 1PCSNChannel DualCool-88-8 MOSFETs ROHS. This product comes in a DualCool-88-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 164A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.1mΩ@10V,36A
  • Power Dissipation (Pd): 178W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 50pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 14nF@40V
  • Total Gate Charge (Qg@Vgs): 152nC@0~8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMT1D3N08B

Model NumberFDMT1D3N08B
Model Nameonsemi FDMT1D3N08B
CategoryMOSFETs
Brandonsemi
Description80V 164A 1.1mΩ@10V,36A 178W 3.2V@250uA 1PCSNChannel DualCool-88-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDualCool-88-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)164A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.1mΩ@10V,36A
Power Dissipation (Pd)178W
Gate Threshold Voltage (Vgs(th)@Id)3.2V@250uA
Reverse Transfer Capacitance (Crss@Vds)50pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)14nF@40V
Total Gate Charge (Qg@Vgs)152nC@0~8V
Operating Temperature-55℃~+150℃@(Tj)

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