FDMT800100DC by onsemi – Specifications

onsemi FDMT800100DC is a FDMT800100DC from onsemi, part of the MOSFETs. It is designed for 100V 2.3mΩ@10V,24A 2.8V@250uA 1PCSNChannel DualCool-88-8 MOSFETs ROHS. This product comes in a DualCool-88-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 24A;162A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3mΩ@10V,24A
  • Power Dissipation (Pd): 3.2W;156W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 35pF@50V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.595nF@50V
  • Total Gate Charge (Qg@Vgs): 50nC@0~6V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FDMT800100DC

Model NumberFDMT800100DC
Model Nameonsemi FDMT800100DC
CategoryMOSFETs
Brandonsemi
Description100V 2.3mΩ@10V,24A 2.8V@250uA 1PCSNChannel DualCool-88-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDualCool-88-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)24A;162A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.3mΩ@10V,24A
Power Dissipation (Pd)3.2W;156W
Gate Threshold Voltage (Vgs(th)@Id)2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)35pF@50V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.595nF@50V
Total Gate Charge (Qg@Vgs)50nC@0~6V
Operating Temperature-55℃~+150℃@(Tj)

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