onsemi FDN352AP is a FDN352AP from onsemi, part of the MOSFETs. It is designed for 30V 1.3A 500mW 180mΩ@10V,1.3A 2.5V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 1.3A
- Power Dissipation (Pd): 500mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@10V,1.3A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 150pF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.
More on FDN352AP
Full Specifications of FDN352AP
| Model Number | FDN352AP |
| Model Name | onsemi FDN352AP |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 1.3A 500mW 180mΩ@10V,1.3A 2.5V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.030 grams / 0.001058 oz |
| Package / Case | SOT-23 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 1.3A |
| Power Dissipation (Pd) | 500mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 180mΩ@10V,1.3A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 150pF@15V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | -55℃~+150℃@(Tj) |