FDN361AN by onsemi – Specifications

onsemi FDN361AN is a FDN361AN from onsemi, part of the MOSFETs. It is designed for 30V 1.8A 100mΩ@1.8A,10V 500mW 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 1.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@1.8A,10V
  • Power Dissipation (Pd): 500mW
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 220pF@15V
  • Total Gate Charge (Qg@Vgs): 4nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.

Full Specifications of FDN361AN

Model NumberFDN361AN
Model Nameonsemi FDN361AN
CategoryMOSFETs
Brandonsemi
Description30V 1.8A 100mΩ@1.8A,10V 500mW 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.030 grams / 0.001058 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)1.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)100mΩ@1.8A,10V
Power Dissipation (Pd)500mW
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)220pF@15V
Total Gate Charge (Qg@Vgs)4nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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