onsemi FDN361AN is a FDN361AN from onsemi, part of the MOSFETs. It is designed for 30V 1.8A 100mΩ@1.8A,10V 500mW 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 1.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@1.8A,10V
- Power Dissipation (Pd): 500mW
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 220pF@15V
- Total Gate Charge (Qg@Vgs): 4nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.
More on FDN361AN
Full Specifications of FDN361AN
Model Number | FDN361AN |
Model Name | onsemi FDN361AN |
Category | MOSFETs |
Brand | onsemi |
Description | 30V 1.8A 100mΩ@1.8A,10V 500mW 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.030 grams / 0.001058 oz |
Package / Case | SOT-23-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 1.8A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 100mΩ@1.8A,10V |
Power Dissipation (Pd) | 500mW |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 220pF@15V |
Total Gate Charge (Qg@Vgs) | 4nC@5V |
Operating Temperature | -55℃~+150℃@(Tj) |