FDP039N08B-F102 by onsemi – Specifications

onsemi FDP039N08B-F102 is a FDP039N08B-F102 from onsemi, part of the MOSFETs. It is designed for 80V 171A 3.16mΩ@10V,100A 214W 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 171A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.16mΩ@10V,100A
  • Power Dissipation (Pd): 214W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 30pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.45nF@40V
  • Total Gate Charge (Qg@Vgs): 133nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.

More on FDP039N08B-F102

Full Specifications of FDP039N08B-F102

Model NumberFDP039N08B-F102
Model Nameonsemi FDP039N08B-F102
CategoryMOSFETs
Brandonsemi
Description80V 171A 3.16mΩ@10V,100A 214W 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.680 grams / 0.094534 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)171A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.16mΩ@10V,100A
Power Dissipation (Pd)214W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)30pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.45nF@40V
Total Gate Charge (Qg@Vgs)133nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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