FDP3651U by onsemi – Specifications

onsemi FDP3651U is a FDP3651U from onsemi, part of the MOSFETs. It is designed for 100V 80A 13mΩ@10V,40A 255W 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@10V,40A
  • Power Dissipation (Pd): 255W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 89pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.152nF@25V
  • Total Gate Charge (Qg@Vgs): 49nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.6 grams.

Full Specifications of FDP3651U

Model NumberFDP3651U
Model Nameonsemi FDP3651U
CategoryMOSFETs
Brandonsemi
Description100V 80A 13mΩ@10V,40A 255W 4.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.600 grams / 0.091712 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)13mΩ@10V,40A
Power Dissipation (Pd)255W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)89pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.152nF@25V
Total Gate Charge (Qg@Vgs)49nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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