FDPF3860TYDTU by onsemi – Specifications

onsemi FDPF3860TYDTU is a FDPF3860TYDTU from onsemi, part of the MOSFETs. It is designed for 100V 20A 38.2mΩ@5.9A,10V 33.8W 4.5V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 20A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 38.2mΩ@5.9A,10V
  • Power Dissipation (Pd): 33.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.8nF@25V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of FDPF3860TYDTU

Model NumberFDPF3860TYDTU
Model Nameonsemi FDPF3860TYDTU
CategoryMOSFETs
Brandonsemi
Description100V 20A 38.2mΩ@5.9A,10V 33.8W 4.5V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220F-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)20A
Drain Source On Resistance (RDS(on)@Vgs,Id)38.2mΩ@5.9A,10V
Power Dissipation (Pd)33.8W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.8nF@25V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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