onsemi FDS3572_NL is a FDS3572_NL from onsemi, part of the MOSFETs. It is designed for 80V 8.9A 2.5W 16mΩ@8.9A,10V 4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 8.9A
- Power Dissipation (Pd): 2.5W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@8.9A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.99nF@25V
- Total Gate Charge (Qg@Vgs): 41nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.
More on FDS3572_NL
Full Specifications of FDS3572_NL
| Model Number | FDS3572_NL |
| Model Name | onsemi FDS3572_NL |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 80V 8.9A 2.5W 16mΩ@8.9A,10V 4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.215 grams / 0.007584 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 80V |
| Continuous Drain Current (Id) | 8.9A |
| Power Dissipation (Pd) | 2.5W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 16mΩ@8.9A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.99nF@25V |
| Total Gate Charge (Qg@Vgs) | 41nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |