onsemi FDS4501H is a FDS4501H from onsemi, part of the MOSFETs. It is designed for 18mΩ@9.3A,10V 1W 3V@250uA 1PCSNChannel+1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V;20V
- Continuous Drain Current (Id): 9.3A;5.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@9.3A,10V
- Power Dissipation (Pd): 1W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel+1PCSPChannel
- Input Capacitance (Ciss@Vds): 1.958nF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.22 grams.
More on FDS4501H
Full Specifications of FDS4501H
Model Number | FDS4501H |
Model Name | onsemi FDS4501H |
Category | MOSFETs |
Brand | onsemi |
Description | 18mΩ@9.3A,10V 1W 3V@250uA 1PCSNChannel+1PCSPChannel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.220 grams / 0.00776 oz |
Package / Case | SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V;20V |
Continuous Drain Current (Id) | 9.3A;5.6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 18mΩ@9.3A,10V |
Power Dissipation (Pd) | 1W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel+1PCSPChannel |
Input Capacitance (Ciss@Vds) | 1.958nF@10V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |