onsemi FDS4897C is a FDS4897C from onsemi, part of the MOSFETs. It is designed for 40V 29mΩ@6.2A,10V 900mW 3V@250uA 1PCSNChannel+1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 6.2A;4.4A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 29mΩ@6.2A,10V
- Power Dissipation (Pd): 900mW
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel+1PCSPChannel
- Input Capacitance (Ciss@Vds): 760pF@20V
- Total Gate Charge (Qg@Vgs): 20nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.222 grams.
More on FDS4897C
Full Specifications of FDS4897C
Model Number | FDS4897C |
Model Name | onsemi FDS4897C |
Category | MOSFETs |
Brand | onsemi |
Description | 40V 29mΩ@6.2A,10V 900mW 3V@250uA 1PCSNChannel+1PCSPChannel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.222 grams / 0.007831 oz |
Package / Case | SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 6.2A;4.4A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 29mΩ@6.2A,10V |
Power Dissipation (Pd) | 900mW |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel+1PCSPChannel |
Input Capacitance (Ciss@Vds) | 760pF@20V |
Total Gate Charge (Qg@Vgs) | 20nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |