onsemi FDS8813NZ is a FDS8813NZ from onsemi, part of the MOSFETs. It is designed for 30V 18.5A 2.5W 4.5mΩ@10V,18.5A 3V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 18.5A
- Power Dissipation (Pd): 2.5W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@10V,18.5A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 4.145nF@15V
- Total Gate Charge (Qg@Vgs): 76nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.
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Full Specifications of FDS8813NZ
| Model Number | FDS8813NZ |
| Model Name | onsemi FDS8813NZ |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 18.5A 2.5W 4.5mΩ@10V,18.5A 3V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.120 grams / 0.004233 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 18.5A |
| Power Dissipation (Pd) | 2.5W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.5mΩ@10V,18.5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 4.145nF@15V |
| Total Gate Charge (Qg@Vgs) | 76nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |