onsemi FQA16N25C is a FQA16N25C from onsemi, part of the MOSFETs. It is designed for 250V 17.8A 270mΩ@8.9A,10V 180W 4V@250uA 1PCSNChannel TO-3P MOSFETs ROHS. This product comes in a TO-3P package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 250V
- Continuous Drain Current (Id): 17.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 270mΩ@8.9A,10V
- Power Dissipation (Pd): 180W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.08nF@25V
- Total Gate Charge (Qg@Vgs): 53.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FQA16N25C
Full Specifications of FQA16N25C
| Model Number | FQA16N25C |
| Model Name | onsemi FQA16N25C |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 250V 17.8A 270mΩ@8.9A,10V 180W 4V@250uA 1PCSNChannel TO-3P MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-3P |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 250V |
| Continuous Drain Current (Id) | 17.8A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 270mΩ@8.9A,10V |
| Power Dissipation (Pd) | 180W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.08nF@25V |
| Total Gate Charge (Qg@Vgs) | 53.5nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |