onsemi FQA6N90C-F109 is a FQA6N90C-F109 from onsemi, part of the MOSFETs. It is designed for 900V 6A 1.93Ω@10V,3A 198W 5V@250uA 1PCSNChannel TO-3PN MOSFETs ROHS. This product comes in a TO-3PN package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 900V
- Continuous Drain Current (Id): 6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.93Ω@10V,3A
- Power Dissipation (Pd): 198W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 11pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.77nF@25V
- Total Gate Charge (Qg@Vgs): 40nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.52 grams.
More on FQA6N90C-F109
Full Specifications of FQA6N90C-F109
Model Number | FQA6N90C-F109 |
Model Name | onsemi FQA6N90C-F109 |
Category | MOSFETs |
Brand | onsemi |
Description | 900V 6A 1.93Ω@10V,3A 198W 5V@250uA 1PCSNChannel TO-3PN MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 8.520 grams / 0.300534 oz |
Package / Case | TO-3PN |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 900V |
Continuous Drain Current (Id) | 6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.93Ω@10V,3A |
Power Dissipation (Pd) | 198W |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 11pF@25V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.77nF@25V |
Total Gate Charge (Qg@Vgs) | 40nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |