onsemi FQA7N80C is a FQA7N80C from onsemi, part of the MOSFETs. It is designed for 800V 7A 198W 1.9Ω@3.5A,10V 5V@250uA 1PCSNChannel TO-3P MOSFETs ROHS. This product comes in a TO-3P package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 7A
- Power Dissipation (Pd): 198W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.9Ω@3.5A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.68nF@25V
- Total Gate Charge (Qg@Vgs): 35nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FQA7N80C
Full Specifications of FQA7N80C
| Model Number | FQA7N80C |
| Model Name | onsemi FQA7N80C |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 800V 7A 198W 1.9Ω@3.5A,10V 5V@250uA 1PCSNChannel TO-3P MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-3P |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 800V |
| Continuous Drain Current (Id) | 7A |
| Power Dissipation (Pd) | 198W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.9Ω@3.5A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.68nF@25V |
| Total Gate Charge (Qg@Vgs) | 35nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |