FQB13N06LTM by onsemi – Specifications

onsemi FQB13N06LTM is a FQB13N06LTM from onsemi, part of the MOSFETs. It is designed for 60V 13.6A 110mΩ@6.8A,10V 2.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 13.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@6.8A,10V
  • Power Dissipation (Pd): 3.75W;45W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 350pF@25V
  • Total Gate Charge (Qg@Vgs): 6.4nC@5V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FQB13N06LTM

Model NumberFQB13N06LTM
Model Nameonsemi FQB13N06LTM
CategoryMOSFETs
Brandonsemi
Description60V 13.6A 110mΩ@6.8A,10V 2.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)13.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)110mΩ@6.8A,10V
Power Dissipation (Pd)3.75W;45W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)350pF@25V
Total Gate Charge (Qg@Vgs)6.4nC@5V
Operating Temperature-55℃~+175℃@(Tj)

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