onsemi FQB13N06LTM is a FQB13N06LTM from onsemi, part of the MOSFETs. It is designed for 60V 13.6A 110mΩ@6.8A,10V 2.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 13.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@6.8A,10V
- Power Dissipation (Pd): 3.75W;45W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 350pF@25V
- Total Gate Charge (Qg@Vgs): 6.4nC@5V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FQB13N06LTM
Model Number | FQB13N06LTM |
Model Name | onsemi FQB13N06LTM |
Category | MOSFETs |
Brand | onsemi |
Description | 60V 13.6A 110mΩ@6.8A,10V 2.5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | D2PAK(TO-263) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 13.6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 110mΩ@6.8A,10V |
Power Dissipation (Pd) | 3.75W;45W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 350pF@25V |
Total Gate Charge (Qg@Vgs) | 6.4nC@5V |
Operating Temperature | -55℃~+175℃@(Tj) |