onsemi FQB25N33TM is a FQB25N33TM from onsemi, part of the MOSFETs. It is designed for 330V 25A 230mΩ@10V,12.5A 5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 330V
- Continuous Drain Current (Id): 25A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 230mΩ@10V,12.5A
- Power Dissipation (Pd): 3.1W;250W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.01nF@25V
- Total Gate Charge (Qg@Vgs): 75nC@15V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FQB25N33TM
Full Specifications of FQB25N33TM
Model Number | FQB25N33TM |
Model Name | onsemi FQB25N33TM |
Category | MOSFETs |
Brand | onsemi |
Description | 330V 25A 230mΩ@10V,12.5A 5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | D2PAK(TO-263) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 330V |
Continuous Drain Current (Id) | 25A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 230mΩ@10V,12.5A |
Power Dissipation (Pd) | 3.1W;250W |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.01nF@25V |
Total Gate Charge (Qg@Vgs) | 75nC@15V |
Operating Temperature | -55℃~+150℃@(Tj) |
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